Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment
An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment

The Cr/Ni/Au non-alloyed ohmic contact resistance on n-type GaN is obtained by chemical surface treatment of n-type GaN films following the laser lift-off of the sapphire substrate. The effects of n-GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. Nitrogen vacancies at the n-type GaN surface are therefore produced and act as donors for electrons, improving the non-alloyed ohmic contact resistance induced by the reduction in native oxygen by the surface treatment of chemical solutions. In addition, the n-GaN surface treatment reduces the forward voltage (Vf) of the vertical LEDs.

 

Source:Ieee

For more information, please visit our website:www.galliumnitrides.com,

 

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com