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Home > News > Parallel conduction in p-type gallium nitride homo-structures
Parallel conduction in p-type gallium nitride homo-structures

 Usually the multi-layer technique is applied for the growth of p-type gallium nitride (GaN) films, and the active p-type layer is deposited on an n-type GaN buffer layer. In the present paper, the electrical transport phenomena (conductivity and Hall effect) have been studied in p-GaN/GaN homo-structures grown on a sapphire substrate. Two types of GaN buffer layers were used: a silicon-doped one and another strongly compensated by magnesium. We demonstrate that in the analysis of the electrical conduction phenomena the parallel conduction in the n-type buffer layer cannot be neglected, and it manifests itself in the studies of a conduction process as a function of temperature and as a function of electric field intensity.




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