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Home > News > Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN
Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN

 Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.

Source: iopscience


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