Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates

 Vapor-phase epitaxy of Fe-doped thick GaN layers was performed using GaCl, NH3 and FeCl2 as source gases on (0001) sapphire and (111)A GaAs substrates with the aim of preparing semi-insulating GaN substrates. On sapphire, the resistivity of the GaN layer increased with increasing FeCl2 input partial pressure. A 12-µm-thick SI GaN layer showing a resistivity of 3.0×109 Ω cm at room temperature was successfully grown by compensating for background donors. In contrast, the resistivity of the GaN layers grown on the GaAs substrate remained low (on the order of 10-2 Ω cm) even though the same growth conditions were used as on the sapphire substrate. Secondary ion mass spectroscopy (SIMS) measurements suggested that the presence of As vapor-species caused by the degradation of the substrate hindered Fe from becoming incorporated into GaN.

 

Source:Ieee


For more information, please visit our website:
www.galliumnitrides.com,

 

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com