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Home > News > Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates

The hydride vapor phase epitaxy of a 400-µm-thick GaN layer doped with Fe was performed on a (111)A GaAs starting substrate covered by a NiTi protective layer on its back. By removing the GaAs substrate after GaN growth, a semi-insulating (SI) (0001) GaN wafer showing a resistivity of 8.8×1012 Ω cm at room temperature was successfully fabricated. A secondary ion mass spectrometry (SIMS) measurement revealed that doping with an Fe concentration of 1.5×1019 cm-3 was achieved. The full-width at half-maximum (FWHM) of X-ray diffraction (XRD) rocking curves of the (0002) and (1010) planes of GaN did not vary with Fe doping. The etch-pit density (EPD) of a SI GaN wafer was evaluated to be 8×106 cm-2.


Source: iopscience

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