Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: gan@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers
Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

Nitride-based diodes with an in situ grown, 30 nm thick unactivated Mg-doped GaN cap layer were fabricated. It was found that we could significantly reduce leakage current by using the semi-insulating Mg-doped GaN cap layer. This is due to the thicker and higher potential barrier and the effective passivation of surface states when the semi-insulating Mg-doped GaN cap layer was inserted.

 

Source:iopscience

For more information, please visit our website:www.galliumnitrides.com,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com